features trenchfet power mosfet 100% r g tested si3552dv vishay siliconix document number: 70971 s-31725?rev. b, 18-aug-03 www.vishay.com 1 n- and p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) n-channel 30 0.105 @ v gs = 10 v 2.5 n - ch anne l 30 0.175 @ v gs = 4.5 v 2.0 p channel 30 0.200 @ v gs = - 10 v - 1.8 p-channel -30 0.360 @ v gs = - 4.5 v - 1.2 d 1 g 1 s 1 n-channel mosfet s 2 g 2 d 2 p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm d2 g2 s1 s2 d1 g1 ordering information: si3552dv-t1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol n-channel p-channel unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 c) a b t a = 25 c i d 2.5 - 1.8 continuous drain current (t j = 150 c) a, b t a = 70 c i d 2.0 - 1.2 a pulsed drain current i dm 8 -7 a continuous source current (diode conduction) a, b i s 1.05 - 1.05 maximum power dissipation a b t a = 25 c p d 1.15 w maximum power dissipation a, b t a = 70 c p d 0.73 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 93 110 maximum junction-to-ambient a steady state r thja 130 150 c/w maximum junction-to-lead steady state r thjl 75 90 c/w notes a. surface mounted on fr4 board. b. t 5 sec
si3552dv vishay siliconix www.vishay.com 2 document number: 70971 s-31725?rev. b, 18-aug-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1.0 v g ate th res h o ld v o l tage v gs(th) v ds = v gs , i d = - 250 a p-ch - 1.0 v gate body leakage i gss v ds = 0 v v gs = 20 v n-ch 100 na gate-body leakage i gss v ds = 0 v, v gs = 20 v p-ch 100 na v ds = 24 v, v gs = 0 v n-ch 1 zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v p-ch -1 a zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c n-ch 5 a v ds = - 24 v, v gs = 0 v, t j = 55 c p-ch -5 on state drain current a i d( ) v ds = 5 v, v gs = 10 v n-ch 5 a on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v p-ch -5 a v gs = 10 v, i d = 2.5 a n-ch 0.085 0.105 drain source on state resistance a r ds( ) v gs = - 10 v, i d = - 1.8 a p-ch 0.165 0.200 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 2.0 a n-ch 0.140 0.175 v gs = - 4.5 v, i d = - 1.2 a p-ch 0.298 0.360 forward transconductance a g f v ds = 10 v, i d = 2.5 a n-ch 4.3 s forward transconductance a g fs v ds = - 15 v, i d = - 1.8 a p-ch 2.4 s diode forward voltage a v sd i s = 1.05 a, v gs = 0 v n-ch 0.81 1.10 v diode forward voltage a v sd i s = - 1.05 a, v gs = 0 v p-ch - 0.83 - 1.10 v dynamic b total gate charge q g n-ch 2.1 3.2 t ota l g ate ch arge q g n-channel p-ch 2.4 3.6 gate source charge q n - channel v ds = 15 v, v gs = 5 v, i d = 1.8 a n-ch 0.7 nc gate-source charge q gs p-channel v 15 v v 5 v i 18 a p-ch 0.9 n c gate drain charge q d v ds = - 15 v, v gs = - 5 v, i d = - 1.8 a n-ch 0.7 gate-drain charge q gd p-ch 0.8 gate resistance r n-ch 0.5 2.4 gate resistance r g p-ch 3 11 turn on delay time t d( ) n-ch 7 11 turn-on delay time t d(on) p-ch 8 12 rise time t n-channel v dd = 15 v, r l = 15 n-ch 9 14 rise time t r v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 p-ch 12 18 turn off delay time t d( ff) p-channel v 1 v r 1 n-ch 13 20 ns turn-off delay time t d(off) p channel v dd = - 15 v, r l = 15 i d -1 a , v gen = - 10 v , r g = 6 p-ch 12 18 ns fall time t f i d - 1 a , v gen = - 10 v , r g = 6 n-ch 5 8 fall time t f p-ch 7 11 source-drain t i f = 1.05 a, di/dt = 100 a/ s n-ch 35 60 source-drain reverse recovery time t rr i f = - 1.05 a, di/dt = 100 a/ s p-ch 30 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
si3552dv vishay siliconix document number: 70971 s-31725?rev. b, 18-aug-03 www.vishay.com 3 typical characteristics (25 c unless noted) nchannel - on-resistance ( 0 2 4 6 8 10 0123456 0 2 4 6 8 10 012345 0 2 4 6 8 10 01234 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 01234567 0 50 100 150 200 250 300 0 5 10 15 20 25 30 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 thru 5 v v gs - gate-to-source voltage (v) - drain current (a) i d 25 c t c = - 55 c - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs c rss c oss c iss r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 4 v 3 v 125 c v ds = 15 v i d = 1.8 a v gs = 10 v i d = 2.5 a 2v
si3552dv vishay siliconix www.vishay.com 4 document number: 70971 s-31725?rev. b, 18-aug-03 typical characteristics (25 c unless noted) nchannel 0.01 0 1 6 8 2 4 10 30 0.1 power (w) single pulse power (junction-to-ambient) time (sec) - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.08 0.16 0.24 0.32 0.40 0246810 0.1 1 10 i d = 2.5 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold v oltage variance (v) v gs(th) t j - temperature ( c) source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm i d = 2 a
si3552dv vishay siliconix document number: 70971 s-31725?rev. b, 18-aug-03 www.vishay.com 5 typical characteristics (25 c unless noted) nchannel 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance typical characteristics (25 c unless noted) pchannel 0 2 4 6 8 10 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01234567 0 60 120 180 240 300 0 6 12 18 24 30 0 2 4 6 8 0123456 output characteristics transfer characteristics on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d v ds - drain-to-source voltage (v) c - capacitance (pf) - on-resistance ( r ds(on) ) i d - drain current (a) capacitance v gs = 10 thru 7 v 2 v t c = - 55 c 125 c v gs = 10 v v gs = 4.5 v c rss c oss c iss 3 v 4 v 5 v 6 v 25 c
si3552dv vishay siliconix www.vishay.com 6 document number: 70971 s-31725?rev. b, 18-aug-03 typical characteristics (25 c unless noted) pchannel 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0246810 v gs - gate-to-source voltage (v) 0 2 4 6 8 10 012345 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 gate charge - gate-to-source voltage (v) q g - total gate charge (nc) v gs on-resistance vs. junction t emperature v gs = 10 v i d = 1.8 a t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) on-resistance vs. gate-to-source voltage threshold v oltage - on-resistance ( r ds(on) ) t j - temperature ( c) i d = 250 a variance (v) v gs(th) v ds = 15 v i d = 1.8 a i d = 1.8 a i d = 1 a 0.01 0 1 6 8 2 4 10 30 0.1 power (w) single pulse power (junction-to-ambient) time (sec)
si3552dv vishay siliconix document number: 70971 s-31725?rev. b, 18-aug-03 www.vishay.com 7 typical characteristics (25 c unless noted) pchannel 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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